diode
Muzvikamu zvemagetsi, chigadziri chine ma electrode maviri anongobvumira ikozvino kuyerera munzira imwechete inowanzoshandiswa pakugadzirisa kwayo basa. Uye varactor diodes inoshandiswa semagetsi inogadziriswa capacitors. Mafambiro azvino ane diode mazhinji anowanzo kunzi "kugadzirisa" basa. Basa rakajairika redhiodhi nderekubvumidza ikozvino kuti ipfuure munzira imwe chete (inozivikanwa semberi bias), uye kuivharira kumashure (inozivikanwa sereverse bias). Nokudaro, diodes inogona kufungidzirwa semagetsi emagetsi evhavhavhavhavha.
Early vacuum electronic diodes; Icho chigadzirwa chemagetsi chinogona kuitisa ikozvino unidirectionally. Pane PN junction ine materminal maviri ekutungamirira mukati me semiconductor diode, uye iyi yemagetsi ine unidirectional current conductivity maererano negwara remhepo inoshandiswa. Kazhinji kutaura, crystal diode ndeye pn junction interface inoumbwa ne sintering p-mhando uye n-mhando semiconductors. Space charge layers inoumbwa pamativi ese echiratidziro chayo, ichigadzira munda wemagetsi wakazvivakira wega. Kana iyo voltage yakashandiswa yakaenzana ne zero, iyo diffusion iripo inokonzereswa nemusiyano wemusiyano wevatakuri vechaji pamativi ese e pn junction uye kudhiraivha ikozvino kunokonzerwa neyakazvivakira yemagetsi munda yakaenzana uye mune yemagetsi equilibrium state, iri zvakare. hunhu hwema diode pasi pemamiriro akajairika.
Madhiyodhi ekutanga aisanganisira "katsi whisker crystals" uye vacuum chubhu (inozivikanwa se "thermal ionization valves" muUK). Madhiyodhi anozivikanwa mazuva ano anonyanya kushandisa semiconductor zvinhu zvakaita sesilicon kana germanium.

hunhu
Positivity
Kana mhepo yekuenda mberi ichishandiswa, pakutanga kwechimiro chemberi, mhepo yekumberi idiki uye haina kukwana kukurira iyo inovharira mhedzisiro yemunda wemagetsi mukati mePN junction. Iyo yekumberi ikozvino inenge zero, uye chikamu ichi chinonzi nzvimbo yakafa. Iyo yekumberi voltage isingakwanise kuita diode conduction inonzi yakafa zone voltage. Kana mhepo yekumberi yakakura kudarika yakafa zone voltage, nzvimbo yemagetsi mukati mePN junction inokundwa, diode inotungamira mberi, uye ikozvino inowedzera nokukurumidza nekuwedzera kwemagetsi. Mukati meiyo yakajairika yekushandiswa kwezvino, iyo terminal voltage ye diode inoramba inogara isingachinji panguva yekufambisa, uye iyi voltage inonzi kumberi kweiyo diode. Kana iyo yekumberi voltage padhiodhi ichipfuura imwe kukosha, iyo yemukati yemagetsi munda inokurumidza kupera simba, hunhu huripo hunowedzera nekukurumidza, uye diode inoitisa munzira yekumberi. Inonzi threshold voltage kana threshold voltage, inenge 0.5V yemachubhu esilicon uye inenge 0.1V yemachubhu egermanium. Iyo yemberi conduction voltage inodonha yesilicon diode inenge 0.6-0.8V, uye kumberi conduction voltage donho regermanium diodes inenge 0.2-0.3V.
Reverse polarity
Kana iyo reverse voltage yakashandiswa isingapfuure imwe nhanho, yazvino ichipfuura nepakati diode ndiyo inodzokera kumashure inoumbwa nedhift motion yevadiki vatakuri. Nekuda kweiyo diki reverse ikozvino, iyo diode iri mukucheka-kubvisa mamiriro. Iri reverse razvino rinozivikanwawo sereverse saturation ikozvino kana kuvuza ikozvino, uye reverse saturation ikozvino ye diode inokanganiswa zvakanyanya nekushisa. Iyo inodzokera kumashure yeyakajairwa silicon transistor idiki zvakanyanya pane iyo yegermanium transistor. Iyo reverse saturation ikozvino yepasi-simba silicon transistor iri muhurongwa hweNA, nepo iyo yepasi-simba germanium transistor iri muhurongwa hwe μ A. Kana kutonhora kuchikwira, semiconductor inofara nekupisa, nhamba ye vatakuri vashoma vanowedzera, uye reverse saturation ikozvino inowedzerawo maererano.

breakdown
Kana iyo inoshandiswa reverse voltage inodarika imwe kukosha, reverse current ichawedzera kamwe kamwe, iyo inonzi kuparara kwemagetsi. Iyo yakakosha voltage inokonzeresa kuparara kwemagetsi inonzi diode reverse breakdown voltage. Kana kuparara kwemagetsi kunoitika, diode inorasikirwa neunidirectional conductivity. Kana iyo diode isingawedzere nekuda kwekuparara kwemagetsi, iyo unidirectional conductivity haigoni kuparadzwa zvachose. Kuita kwayo kunogona kudzoreredzwa mushure mekubvisa iyo yakashandiswa voltage, zvikasadaro diode ichakuvadzwa. Naizvozvo, yakawandisa reverse voltage inoshandiswa kune diode inofanira kudzivirirwa panguva yekushandiswa.
A diode mudziyo wemagetsi maviri ane unidirectional conductivity, anogona kukamurwa kuita emagetsi diode uye crystal diode. Electronic diodes ane zvishoma kushanda kupfuura crystal diodes nekuda kwekupisa kurasikirwa kwefilament, saka ivo havawanzoonekwa. Crystal diodes inonyanya kushandiswa uye inowanzoshandiswa. Iyo unidirectional conductivity ye diode inoshandiswa munenge ese emagetsi maseketi, uye semiconductor diode inoita basa rakakosha mumaseketi mazhinji. Ndiyo imwe yemidziyo yekutanga semiconductor uye ine huwandu hwakawanda hwekushandisa.
Kudonha kwemagetsi kumberi kwesilicon diode (rudzi rusina kupenya) i0.7V, nepo kudonha kwemagetsi kumberi kwegermanium diode kuri 0.3V. Kudonha kwemagetsi kumberi kwechiedza-emitting diode inosiyana neyakasiyana mavara anopenya. Iko kunonyanya kuve nemavara matatu, uye chaiwo voltage donho rereferensi maitiro akadai: kudonha kwevoltage yered light-emitting diode ndeye 2.0-2.2V, kudonha kwevoltage yeyellow light-emitting diode i1.8-2.0V, uye voltage donhwe regirini chiedza-emitting diodes ndeye 3.0-3.2V. Iyo yakayerwa ikozvino panguva yakajairwa mwenje kuburitswa ingangoita 20mA.
Iyo voltage uye yazvino ye diode haina hukama mutsetse, saka kana uchibatanidza madhiodhi akasiyana mukufanana, zvinopikisa zvakakodzera zvinofanirwa kubatanidzwa.

characteristic curve
Kufanana nePN junctions, diode dzine unidirectional conductivity. Yakajairika volt ampere hunhu curve yesilicon diode. Kana mhepo yekumberi ichiiswa kune diode, ikozvino idiki zvakanyanya kana kukosha kwevoltage kwakaderera; Apo mhepo inodarika 0.6V, ikozvino inotanga kuwedzera kuwedzera, iyo inowanzonzi inonzi turn-on voltage ye diode; Kana iyo voltage inosvika panosvika 0.7V, diode iri mune yakazara conductive state, inowanzonzi conduction voltage ye diode, inomiririrwa nechiratidzo UD.
Kune germanium diode, iyo-inobatidza voltage ndeye 0.2V uye conduction voltage UD inoda kusvika 0.3V. Kana reverse voltage inoshandiswa kune diode, ikozvino idiki zvakanyanya kana kukosha kwevoltage kwakadzikira, uye kukosha kwayo ikozvino ndiko kudzoreredza saturation ikozvino IS. Kana iyo reverse voltage inodarika imwe kukosha, ikozvino inotanga kuwedzera zvakanyanya, iyo inonzi reverse breakdown. Iyi voltage inonzi reverse breakdown voltage ye diode uye inomiririrwa nechiratidzo UBR. Iko kuparara kwemagetsi UBR maitiro emhando dzakasiyana dzema diode anosiyana zvakanyanya, kubva pamakumi emavolts kusvika kune akati wandei volts.

Reverse breakdown
Zener kuputsika
Reverse breakdown inogona kukamurwa kuita mhando mbiri zvichienderana nemeshini: Zener breakdown uye Avalanche breakdown. Panyaya yekukwirira kwedoping, nekuda kwehupamhi hudiki hwenzvimbo inovharira uye hombe reverse voltage, iyo covalent bond chimiro munharaunda inovharira inoparadzwa, zvichiita kuti maelektroni evalence asununguke kubva kune covalent zvisungo uye kugadzira ma electron hole pairs, zvichikonzera kuwedzera kwakanyanya kwezvino. Kuparara uku kunonzi Zener breakdown. Kana iyo doping yekumisikidza yakadzikira uye hupamhi hwenzvimbo inodzivirira yakafara, hazvisi nyore kukonzera Zener kuparara.

Avalanche breakdown
Imwe mhando yekuputsika ndeye avalanche breakdown. Kana magetsi ereverse akwira kusvika pahukoshi hukuru, nzvimbo yemagetsi inoshandiswa inomhanyisa kumhanya kweerekitironi, zvichikonzera kubonderana nemaerekitironi evalence ari mucovalent bond, zvichiabvisa kubva pachisungo checovalent uye kugadzira maekitironi matsva maviri. Maburi emagetsi achangobva kugadzirwa anokwidziridzwa nemunda wemagetsi uye anodhumhana nemamwe maerekitironi evalence, zvichikonzera kuparara sekuwedzera kwevatakuri vechaji uye kuwedzera kwakanyanya kwezvino. Kuparara kwemhando iyi kunonzi avalanche breakdown. Pasinei nerudzi rwekuputsika, kana ikozvino isina kuganhurirwa, inogona kukonzeresa kukuvara zvachose kune PN junction.